C3M02 stock, C3M02, C3M0280090D


PartNumber	C3M0280090D	C3M0280090J-TR	C3M0280090J
Description	MOSFET G3 SiC MOSFET 900V, 280mOhm	MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm	MOSFET G3 SiC MOSFET 900V, 280 mOhm
Manufacturer	Cree, Inc.	Cree, Inc.	Cree, Inc.
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	SiC	SiC	SiC
Mounting Style	Through Hole	SMD/SMT	SMD/SMT
Package / Case	TO-247-3	TO-263-7	TO-263-7
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	900 V	900 V	900 V
Id Continuous Drain Current	11.5 A	11 A	11 A
Rds On Drain Source Resistance	280 mOhms	385 mOhms	385 mOhms
Vgs th Gate Source Threshold Voltage	2.1 V	1.8 V	1.8 V
Qg Gate Charge	9.5 nC	9.5 nC	9.5 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	54 W	50 W	50 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Reel	Tube
Height	21.1 m	-	-
Length	16.13 mm	-	-
Product	Power MOSFET	Power MOSFET	Power MOSFET
Type	Silicon Carbide MOSFET	Silicon Carbide MOSFET	Silicon Carbide MOSFET
Width	5.21 mm	-	-
Brand	Wolfspeed / Cree	Wolfspeed / Cree	Wolfspeed / Cree
Fall Time	7.5 ns	4 ns	4 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	10 ns	6.5 ns	6.5 ns
Factory Pack Quantity	30	800	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	17.5 ns	11 ns	11 ns
Typical Turn On Delay Time	26 ns	10.5 ns	10.5 ns
Unit Weight	1.340411 oz	0.056438 oz	0.056438 oz
Vgs Gate Source Voltage	-	18 V, - 8 V	18 V, - 8 V
Forward Transconductance Min	-	3.1 S	3.1 S
Moisture Sensitive	-	Yes	-

Search Part Number : "C3M02", Match & Start with "C3M02" - Total : 6

제조사	부분 #	설명
N/A	C3M0280090D	MOSFET G3 SiC MOSFET 900V, 280mOhm
	C3M0280090J-TR	MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm
	C3M0280090J	MOSFET G3 SiC MOSFET 900V, 280 mOhm
	C3M0280090D	MOSFET N-CH 900V 11.5A
	C3M0280090J	MOSFET N-CH 900V 11A
	C3M0280090J-TR	MOSFET N-CH 900V 11A

C3M02