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CGHV6007

CGHV60075D5 vs CGHV60075D5-GP4 vs CGHV60075D

 
PartNumberCGHV60075D5CGHV60075D5-GP4CGHV60075D
DescriptionRF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 WattRF POWER TRANSISTORRF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
ManufacturerQorvo-Wolfspeed / Cree
Product CategoryRF JFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMT-HEMT
TechnologyGaN SiC-GaN SiC
Gain16 dB-17 dB
Transistor PolarityN-Channel-N-Channel
Output Power30 W-75 W
PackagingTray-Gel Pack
Operating Frequency3.5 GHz-6 GHz
SeriesT2G--
TypeGaN SiC HEMT--
BrandQorvo--
Moisture SensitiveYes--
Product TypeRF JFET Transistors--
Factory Pack Quantity36--
SubcategoryTransistors--
Part # Aliases1099983--
Mounting Style--SMD/SMT
Operating Temperature Range---
Package Case--Die
Configuration---
Class---
Pd Power Dissipation--41.6 W
Maximum Operating Temperature---
Minimum Operating Temperature---
Application---
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--150 V
Vgs th Gate Source Threshold Voltage--- 10 V + 2 V
Rds On Drain Source Resistance--0.28 Ohm
Forward Transconductance Min---
Development Kit---
Vgs Gate Source Breakdown Voltage--150 V
Gate Source Cutoff Voltage---
Maximum Drain Gate Voltage---
NF Noise Figure---
P1dB Compression Point---
제조사 부분 # 설명 RFQ
N/A
N/A 		CGHV60075D5 RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGHV60075D5-GP4 RF POWER TRANSISTOR
CGHV60075D5 RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
CGHV60075D RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
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