CMPT3904E

CMPT3904E TR vs CMPT3904E vs CMPT3904ETR

 
PartNumberCMPT3904E TRCMPT3904ECMPT3904ETR
DescriptionBipolar Transistors - BJT NPN Enhanced Complimentary
ManufacturerCentral SemiconductorCentral Semiconductor Corp-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage200 mV200 mV-
Maximum DC Collector Current200 mA200 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMPT3904CMPT39-
Height0.96 mm--
Length3.05 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.4 mm--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesCMPT3904E PBFREE TR--
Unit Weight0.000282 oz0.007090 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-
Power Max-350mW-
Transistor Type-NPN-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 10mA, 1V-
Vce Saturation Max Ib Ic-200mV @ 5mA, 50mA-
Current Collector Cutoff Max---
Frequency Transition-300MHz-
Pd Power Dissipation-350 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-30 at 100 mA 1 V-
제조사 부분 # 설명 RFQ
Central Semiconductor
Central Semiconductor
CMPT3904E TR Bipolar Transistors - BJT NPN Enhanced Complimentary
CMPT3904E 신규 및 오리지널
CMPT3904ETR 신규 및 오리지널
Central Semiconductor
Central Semiconductor
CMPT3904E TR Bipolar Transistors - BJT NPN Enhanced Complimentary
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