| PartNumber | CSD19534Q5A | CSD19534KCS | CSD19534Q5AT |
| Description | MOSFET N-Channel MOSFET | MOSFET 100V N-Channel NexFET Pwr MOSFET | MOSFET 100V, NCh NexFET |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | VSONP-8 | TO-220-3 | VSONP-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 50 A | 100 A | 50 A |
| Rds On Drain Source Resistance | 15.1 mOhms | 16.5 mOhms | 15.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.4 V | 2.4 V | 2.8 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 2.8 V |
| Qg Gate Charge | 17 nC | 16.4 nC | 17 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 63 W | 118 W | 63 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Tube | Reel |
| Height | 1 mm | 16.51 mm | 1 mm |
| Length | 6 mm | 10.67 mm | 6 mm |
| Series | CSD19534Q5A | CSD19534KCS | CSD19534Q5A |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.9 mm | 4.7 mm | 4.9 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 47 S | - | - |
| Fall Time | 6 ns | 1 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 2 ns | 14 ns |
| Factory Pack Quantity | 2500 | 50 | 250 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 9 ns | 20 ns |
| Typical Turn On Delay Time | 9 ns | 6 ns | 9 ns |
| Unit Weight | 0.008818 oz | 0.211644 oz | 0.000847 oz |