CTLT3410-M

CTLT3410-M621 vs CTLT3410-M621TR vs CTLT3410-M621 TR

 
PartNumberCTLT3410-M621CTLT3410-M621TRCTLT3410-M621 TR
DescriptionBipolar Transistors - BJT NPN Low Vce(SAT) 40Vcbo 25Vceo 0.9W
ManufacturerCentral Semiconductor-Central Semiconductor
Product CategoryTransistors - Bipolar (BJT) - RF-Transistors - Bipolar (BJT) - RF
SeriesCTLT34-CTLT34
PackagingReel-Reel
Mounting StyleSMD/SMT-SMD/SMT
Package CaseTLM-621-6-TLM-621-6
ConfigurationSingle-Single
Pd Power Dissipation0.9 W-0.9 W
Maximum Operating Temperature+ 150 C-+ 150 C
Minimum Operating Temperature- 65 C-- 65 C
Collector Emitter Voltage VCEO Max25 V-25 V
Transistor PolarityNPN-NPN
Collector Emitter Saturation Voltage450 mV-450 mV
Collector Base Voltage VCBO40 V-40 V
Emitter Base Voltage VEBO6 V-6 V
Maximum DC Collector Current1.5 A-1.5 A
Gain Bandwidth Product fT100 MHz-100 MHz
Continuous Collector Current1 A-1 A
DC Collector Base Gain hfe Min100 at 10 mA 1 V-100 at 10 mA 1 V
DC Current Gain hFE Max300 at 100 mA at 1 V-300 at 100 mA at 1 V
제조사 부분 # 설명 RFQ
CTLT3410-M621 신규 및 오리지널
CTLT3410-M621TR 신규 및 오리지널
Central Semiconductor
Central Semiconductor
CTLT3410-M621 TR Bipolar Transistors - BJT NPN Low Vce(SAT) 40Vcbo 25Vceo 0.9W
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