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| PartNumber | DMG1029SVQ-7 | DMG1029SV-7 | DMG1029SV-7-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | SOT-563-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 500 mA, - 360 mA | 500 mA, 360 mA | - |
| Rds On Drain Source Resistance | 1.7 Ohms, 4 Ohms | 1.7 Ohms, 4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V, - 3 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 0.3 nC, 0.28 nC | 0.3 nC, 0.28 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1 W | 450 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 80 mS, 50 mS | 80 mS, 50 mS | - |
| Fall Time | 9.9 ns, 11.6 ns | 9.9 ns, 11.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.4 ns, 7.9 ns | 3.4 ns, 7.9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15.7 ns, 10.6 ns | 15.7 ns, 10.6 ns | - |
| Typical Turn On Delay Time | 3.9 ns, 5.5 ns | 3.9 ns, 5.5 ns | - |
| Unit Weight | 0.000952 oz | 0.000106 oz | - |
| Series | - | DMG1029 | - |