DMG2305U

DMG2305UX-7 vs DMG2305UX-13 vs DMG2305UXQ-13

 
PartNumberDMG2305UX-7DMG2305UX-13DMG2305UXQ-13
DescriptionMOSFET P-Ch ENH FET -20V 52mOhm -5.0VMOSFET P-Ch ENH FET -20V 52mOhm -5.0VMOSFET MOSFET BVDSS
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current5 A4.2 A-
Rds On Drain Source Resistance52 mOhms52 mOhms-
Vgs th Gate Source Threshold Voltage900 mV900 mV-
Vgs Gate Source Voltage4.5 V8 V-
Qg Gate Charge10.2 nC10.2 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.4 W1.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMG2305DMG2305DMG230
Transistor Type1 P-Channel1 P-Channel-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time34.7 ns34.7 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time13.7 ns13.7 ns-
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time79.3 ns79.3 ns-
Typical Turn On Delay Time10.8 ns10.8 ns-
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Forward Transconductance Min-9 S-
Qualification--AEC-Q101
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
DMG2305UXQ-7 MOSFET MOSFET BVDSS
DMG2305UX-7 MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
DMG2305UX-13 MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
DMG2305UXQ-13 MOSFET MOSFET BVDSS
DMG2305U-7-F 신규 및 오리지널
DMG2305UX-7 Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
DMG2305UX-7-F 신규 및 오리지널
DMG2305UXQ 신규 및 오리지널
DMG2305UXQ-7 P-CHANNEL ENHANCEMENT MODE MOSFET
DMG2305UX-13-CUT TAPE 신규 및 오리지널
DMG2305UX-7-CUT TAPE 신규 및 오리지널
DMG2305UX 신규 및 오리지널
DMG2305UX-13 Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
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