 |  | | |
| PartNumber | DMG6968UDM-7 | DMG6968UDM | DMG6968UDM-7 , VSSA3L6S- |
| Description | MOSFET DUAL N-CHANNEL | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6.5 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 8.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 850 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG6968UDM | DMG6968 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 1.6 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 234 ns | 234 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 78 ns | 78 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 562 ns | 562 ns | - |
| Typical Turn On Delay Time | 53 ns | 53 ns | - |
| Unit Weight | 0.000529 oz | - | - |
| Package Case | - | SOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-26 | - |
| FET Type | - | 2 N-Channel (Dual) Common Drain | - |
| Power Max | - | 850mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 143pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 6.5A | - |
| Rds On Max Id Vgs | - | 24 mOhm @ 6.5A, 4.5V | - |
| Vgs th Max Id | - | 900mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 8.8nC @ 4.5V | - |
| Pd Power Dissipation | - | 850 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 6.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 0.9 V | - |
| Rds On Drain Source Resistance | - | 24 mOhms | - |
| Qg Gate Charge | - | 8.8 nC | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6968UDM-7 | MOSFET DUAL N-CHANNEL | |
| DMG6968UDM | 신규 및 오리지널 | ||
| DMG6968UDM-7 , VSSA3L6S- | 신규 및 오리지널 | ||
| DMG6968UDM-7-01 | 신규 및 오리지널 | ||
| DMG6968UDM-7-F | 신규 및 오리지널 | ||
| DMG6968UDM-7-CUT TAPE | 신규 및 오리지널 | ||
| DMG6968UDM-7 | IGBT Transistors MOSFET DUAL N-CHANNEL |