 |  | | |
| PartNumber | DMJ70H1D0SV3 | DMJ70H1D3SI3 | DMJ70H1D3SH |
| Description | MOSFET MOSFETBVDSS: 651V-800V | MOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-251-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 700 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 12.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 75 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Unit Weight | 0.011640 oz | 0.011993 oz | - |
| Packaging | - | Tube | Tube |
| Series | - | - | DMJ70H1D3 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMJ70H1D3SJ3 | MOSFET MOSFET BVDSS | |
| DMJ70H1D0SV3 | MOSFET MOSFETBVDSS: 651V-800V | ||
| DMJ70H1D3SI3 | MOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A | ||
| DMJ70H1D0SV3 | MOSFET N-CHANNEL 700V 6A TO251 | ||
| DMJ70H1D3SH | 신규 및 오리지널 | ||
| DMJ70H1D3SI3 | MOSFET N-CH 700V 4.6A TO251 | ||
| DMJ70H1D4SV3 | MOSFET N-CHANNEL 700V 5A TO251 |