 |  | | |
| PartNumber | DMMT5551S-7-F | DMMT5551S | DMMT5551S-13-F |
| Description | Bipolar Transistors - BJT NPN BIPOLAR | TRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 200 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DMMT5551 | - | - |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 30 at 50 mA, 5 V | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001058 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMMT5551S-7-F | Bipolar Transistors - BJT NPN BIPOLAR | |
| DMMT5551S | TRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o | ||
| DMMT5551S-13-F | 신규 및 오리지널 | ||
| DMMT5551S7F | 신규 및 오리지널 | ||
| DMMT5551S-7-F | TRANS 2NPN 160V 0.2A SOT26 |