DMN10H0

DMN10H099SFG-7 vs DMN10H099SFG-13 vs DMN10H099SFG

 
PartNumberDMN10H099SFG-7DMN10H099SFG-13DMN10H099SFG
DescriptionMOSFET 100V N-Ch Enh Mode 1127pF 25.2nCMOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current4.2 A4.2 A-
Rds On Drain Source Resistance54 mOhms99 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25.2 nC25.2 nC-
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation980 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerDIPowerDI-
PackagingReelReel-
SeriesDMN10DMN10-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time7.3 ns--
Product TypeMOSFETMOSFET-
Rise Time5.9 ns--
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time5.4 ns--
Unit Weight0.002540 oz0.002540 oz-
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H099SK3-13 MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H099SFG-7 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG-13 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG 신규 및 오리지널
DMN10H099SK3 신규 및 오리지널
DMN10H099SK3-13 Darlington Transistors MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H099SFG-13 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
DMN10H099SFG-7 MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
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