| PartNumber | DMN3012LDG-7 | DMN3012LDG-13 | DMN3012LEG-13 |
| Description | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1K | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | MOSFET MOSFET BVDSS: 25V-30V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI3333-8 | PowerDI3333-B | PowerDI3333-8 |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 20 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 12 mOhms, 6 mOhms | 12 mOhms, 6 mOhms | 12 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V, 750 mV | 1 V, 750 mV | 1 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 6.1 nC, 12.6 nC | 6.1 nC, 12.6 nC | 6.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.2 W | 2.2 W | 2.2 W |
| Configuration | Dual | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 27 S, 46 S | 27 S, 46 S | - |
| Fall Time | 2.3 ns, 2.9 ns | 2.3 ns, 2.9 ns | 2.3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.7 ns, 3.5 ns | 2.7 ns, 3.5 ns | 2.7 ns |
| Factory Pack Quantity | 1000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 6.4 ns, 12.4 ns | 6.4 ns, 12.4 ns | 6.4 ns |
| Typical Turn On Delay Time | 5.1 ns, 4.4 ns | 5.1 ns, 4.4 ns | 5.1 ns |
| Unit Weight | 0.001552 oz | 0.001552 oz | - |
| Transistor Type | - | - | 1 N-Channel |