 | |  | |
| PartNumber | DMP10H4D2S-7 | DMP10H4D2S-13 | DMP10H4D2S |
| Description | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 270 mA | 270 mA | - |
| Rds On Drain Source Resistance | 4.2 Ohms | 4.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2.3 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 1.8 nC | 1.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 440 mW | 380 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.975 mm | 0.975 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | DMP10 | DMP10 | DMP10 |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 4.9 ns | 4.9 ns | 4.9 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.6 ns | 2.6 ns | 2.6 ns |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8.4 ns | 8.4 ns | 8.4 ns |
| Typical Turn On Delay Time | 3.3 ns | 3.3 ns | 3.3 ns |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Package Case | - | - | SOT-23-3 |
| Pd Power Dissipation | - | - | 0.38 W |
| Vgs Gate Source Voltage | - | - | - 10 V |
| Id Continuous Drain Current | - | - | - 0.27 A |
| Vds Drain Source Breakdown Voltage | - | - | - 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2.3 V |
| Rds On Drain Source Resistance | - | - | 4.2 Ohms |
| Qg Gate Charge | - | - | 1.8 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMP10H4D2S-7 | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | |
| DMP10H4D2S-13 | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | ||
| DMP10H4D2S | 신규 및 오리지널 | ||
| DMP10H4D2S-13 | 100V P-CHANNEL ENHANCEMENT MODE MOSFET | ||
| DMP10H4D2S-7 | Trans MOSFET N-CH 100V 0.27A Automotive 3-Pin SOT-23 T/R |