| PartNumber | DMT3009LFVW-7 | DMT3009LFVWQ-13 | DMT3009LFVW-13 |
| Description | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI3333-8 | PowerDI-3333-8 | PowerDI3333-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 5 A | 12 A | 5 A |
| Rds On Drain Source Resistance | 11 mOhms | 11 mOhms | 11 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 12 nC | 12 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.3 W | 2.3 W | 2.3 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 1.5 ns | 1.5 ns | 1.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.2 ns | 5.2 ns | 5.2 ns |
| Factory Pack Quantity | 2000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8.9 ns | 8.9 ns | 8.9 ns |
| Typical Turn On Delay Time | 3.2 ns | 3.2 ns | 3.2 ns |
| Qualification | - | AEC-Q101 | - |
| Packaging | - | Reel | - |
| Transistor Type | - | 1 N-Channel | - |