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| PartNumber | DMT6010LFG-7 | DMT6010LFG-13 | DMT6010LFG |
| Description | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | MOSFET 60V P-Ch Enh Mode 22Vgss 2090pF 41.3nC | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 7.8 mOhms | 7.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 41.3 nC | 41.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.2 W | 2.2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMT60 | DMT60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 9.7 ns | 9.7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.3 ns | 4.3 ns | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23.4 ns | 23.4 ns | - |
| Typical Turn On Delay Time | 5.7 ns | 5.7 ns | - |
| Unit Weight | 0.002540 oz | 0.002540 oz | - |
| Tradename | - | PowerDI | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT6010LFG-7 | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | |
| DMT6010LFG-13 | MOSFET 60V P-Ch Enh Mode 22Vgss 2090pF 41.3nC | ||
| DMT6010LFG | 신규 및 오리지널 | ||
| DMT6010LFG-7 | Trans MOSFET N-CH 60V 13A Automotive 8-Pin PowerDI EP T/R | ||
| DMT6010LFG-13 | MOSFET 60V P-Ch Enh Mode 22Vgss 2090pF 41.3nC |