DMTH10H010S

DMTH10H010SPS-13 vs DMTH10H010SPSQ-13 vs DMTH10H010SCT

 
PartNumberDMTH10H010SPS-13DMTH10H010SPSQ-13DMTH10H010SCT
DescriptionMOSFET MOSFET BVDSS: 61V-100VMOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5KMOSFET MOSFET BVDSS: 61V-100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CasePowerDI5060-8PowerDI5060-8TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current123 A100 A100 A
Rds On Drain Source Resistance8.8 mOhms8.8 mOhms9.5 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge56.4 nC56.4 nC56.4 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation166 W166 W187 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelTube
SeriesDMTH10H010DMTH10H010DMTH10H010
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time29.5 ns29.5 ns29.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22.5 ns22.5 ns22.5 ns
Factory Pack Quantity2500250050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time44.8 ns44.8 ns44.8 ns
Typical Turn On Delay Time18.6 ns18.6 ns18.6 ns
Unit Weight0.003422 oz0.003422 oz0.065257 oz
RoHS-Y-
Qualification-AEC-Q101-
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
DMTH10H010SPS-13 MOSFET MOSFET BVDSS: 61V-100V
DMTH10H010SPSQ-13 MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
DMTH10H010SCT MOSFET MOSFET BVDSS: 61V-100V
DMTH10H010SPS-13 MOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K
DMTH10H010SPSQ-13 MOSFET N-CHAN 61V 100V POWERDI50
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