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DNLS1

DNLS160-7 vs DNLS160 vs DNLS160V

 
PartNumberDNLS160-7DNLS160DNLS160V
DescriptionBipolar Transistors - BJT NPN 0.3W
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage250 mV-250 mV
Maximum DC Collector Current2 A-2 A
Gain Bandwidth Product fT270 MHz-270 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesDNLS160-DNLS160
Height1.1 mm--
Length3 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.4 mm--
BrandDiodes Incorporated--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz-0.000106 oz
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
Power Max--300mW
Transistor Type--NPN
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--200 @ 500mA, 5V
Vce Saturation Max Ib Ic--250mV @ 100mA, 1A
Current Collector Cutoff Max--100nA
Frequency Transition--270MHz
Pd Power Dissipation--300 mW
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--100 at 1 A 5 V
DC Current Gain hFE Max--250 at 1 mA at 5 V
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated 		DNLS160-7 Bipolar Transistors - BJT NPN 0.3W
DNLS160V-7 Bipolar Transistors - BJT NPN 0.3W
DNLS160 신규 및 오리지널
DNLS160V 신규 및 오리지널
DNLS160-7 Bipolar Transistors - BJT NPN 0.3W
DNLS160V-7 Bipolar Transistors - BJT NPN 0.3W
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