 |  | | |
| PartNumber | DNLS350E-13 | DNLS350E | DNLS350E-13 , XC2151T51C |
| Description | Bipolar Transistors - BJT NPN 1W | ||
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 290 mV | 290 mV | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | DNLS350 | DNLS350 | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Width | 3.5 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 3 A | 3 A | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | 0.000282 oz | - |
| Package Case | - | TO-261-4, TO-261AA | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-223 | - |
| Power Max | - | 1W | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 3A | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| DC Current Gain hFE Min Ic Vce | - | 100 @ 2A, 2V | - |
| Vce Saturation Max Ib Ic | - | 290mV @ 200mA, 2A | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 100MHz | - |
| Pd Power Dissipation | - | 1000 mW | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 100 at 2 A at 2 V | - |
| DC Current Gain hFE Max | - | 200 at 0.5 A at 2 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DNLS350E-13 | Bipolar Transistors - BJT NPN 1W | |
| DNLS350Y-13 | Bipolar Transistors - BJT NPN 1W | ||
| DNLS350E | 신규 및 오리지널 | ||
| DNLS350E-13 , XC2151T51C | 신규 및 오리지널 | ||
| DNLS350Y | 신규 및 오리지널 | ||
| DNLS350Y-13 | Bipolar Transistors - BJT NPN 1W | ||
| DNLS350E-13 | Bipolar Transistors - BJT NPN 1W |