DSS20201L-7

DSS20201L-7 vs DSS20201L-7 , MAX6419UK2 vs DSS20201L-7-F

 
PartNumberDSS20201L-7DSS20201L-7 , MAX6419UK2DSS20201L-7-F
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage100 mV--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDSS202--
DC Current Gain hFE Max200 at 10 mA, 2 V--
Height1 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min200 at 2 A, 2 V--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
DSS20201L-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS20201L-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS20201L-7 , MAX6419UK2 신규 및 오리지널
DSS20201L-7-F 신규 및 오리지널
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