DXT555

DXT5551-13 vs DXT555-13 vs DXT5551

 
PartNumberDXT5551-13DXT555-13DXT5551
DescriptionBipolar Transistors - BJT 1W 160V
ManufacturerDiodes Incorporated-D
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Package / CaseSOT-89-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max160 V--
Collector Base Voltage VCBO180 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage200 mV--
Maximum DC Collector Current600 mA--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDXT5551--
Height1.6 mm--
Length4.6 mm--
PackagingReel--
Width2.6 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min30 at 50 mA, 5 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
DXT5551P5-13 Bipolar Transistors - BJT BIPOLAR TRANS,NPN 160V, 600mA
DXT5551-13 Bipolar Transistors - BJT 1W 160V
DXT555-13 신규 및 오리지널
DXT5551 신규 및 오리지널
DXT5551-13 , XN6401 신규 및 오리지널
DXT5551-13-F 신규 및 오리지널
DXT5551-13 Bipolar Transistors - BJT 1W 160V
DXT5551P5-13 Bipolar Transistors - BJT BIPOLAR TRANS,NPN 160V, 600mA
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