DXTN071 stock, DXTN071, DXTN07100BP5-13


PartNumber	DXTN07100BP5-13	DXTN07100BFG-7	DXTN07100BP5
Description	Bipolar Transistors - BJT 100V NPN TRANSISTOR 3.2W Ic 2A Icm 6A	Bipolar Transistors - BJT Pwr Mid Perf Transistor
Manufacturer	Diodes Incorporated	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	IC Chips
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PowerDI-5	PowerDI3333-8	-
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	100 V	100 V	-
Collector Base Voltage VCBO	120 V	120 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Collector Emitter Saturation Voltage	500 mV	150 mV	500 mV
Maximum DC Collector Current	2 A	2 A	2 A
Gain Bandwidth Product fT	175 MHz	175 MHz	175 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 175 C	+ 150 C
Series	DXTN07100	-	DXTN07100
DC Current Gain hFE Max	300	300	300
Packaging	Reel	Reel	Reel
Brand	Diodes Incorporated	Diodes Incorporated	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	5000	2000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.003386 oz	-	0.003386 oz
Technology	-	Si	-
Continuous Collector Current	-	2 A	-
DC Collector/Base Gain hfe Min	-	100	-
Pd Power Dissipation	-	3.1 W	-
Package Case	-	-	PowerDI5
Collector Emitter Voltage VCEO Max	-	-	100 V
Collector Base Voltage VCBO	-	-	120 V
Emitter Base Voltage VEBO	-	-	7 V
DC Collector Base Gain hfe Min	-	-	100

Search Part Number : "DXTN071", Match & Start with "DXTN071" - Total : 5

제조사	부분 #	설명
Diodes Incorporated	DXTN07100BP5-13	Bipolar Transistors - BJT 100V NPN TRANSISTOR 3.2W Ic 2A Icm 6A
	DXTN07100BFG-7	Bipolar Transistors - BJT Pwr Mid Perf Transistor
	DXTN07100BP5Q-13	Bipolar Transistors - BJT Pwr Mid Perf Transistor
	DXTN07100BP5	신규 및 오리지널
	DXTN07100BP5-13	Bipolar Transistors - BJT 100V NPN TRANSISTOR 3.2W Ic 2A Icm 6A

DXTN071