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| PartNumber | EM6K7T2CR | EM6K7T2R | EM6K7K07 |
| Description | MOSFET 1.2V DRIVE NCH+NCH MOSFET | MOSFET TRNSISTR DUAL MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | SOT-563-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 200 mA | 200 mA | - |
| Rds On Drain Source Resistance | 1.2 Ohms | 800 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 15 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Series | - | EM6K7 | - |
| Forward Transconductance Min | - | 200 mS | - |
| Part # Aliases | - | EM6K7 | - |
| Unit Weight | - | 0.000106 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| EM6K7T2CR | MOSFET 1.2V DRIVE NCH+NCH MOSFET | ||
| EM6M2T2R | MOSFET 1.2V Drive Nch+Pch MOSFET | ||
| EM6M1T2R | MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A | ||
| EM6K7K07 | 신규 및 오리지널 | ||
| EM6M1 | 신규 및 오리지널 | ||
| EM6M1 G T2R | 신규 및 오리지널 | ||
| EM6M1 GT2R | 신규 및 오리지널 | ||
| EM6M1 T2R | 신규 및 오리지널 | ||
| EM6M1GT2R | 신규 및 오리지널 | ||
| EM6M2 | *** FREE SHIPPING ORDERS OVER $100 *** SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.2A I(D), 20V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| EM6M2 , ZMV835ATA | 신규 및 오리지널 | ||
| EM6M2 G T2R | 신규 및 오리지널 | ||
| EM6M2 T2R | 신규 및 오리지널 | ||
| EM6M2GT2R | MOSFETS SMD (Alt: EM6M2GT2R) | ||
| EM6M2T2R | MOSFET N/P-CH 20V 0.2A EMT6 | ||
| EM6M2T2R,KRA101S,S1ZAS4, | 신규 및 오리지널 | ||
| EM6P8021K019 | 신규 및 오리지널 | ||
| EM6R6303J019 | 신규 및 오리지널 | ||
| EM6K7T2R | Darlington Transistors MOSFET TRNSISTR DUAL MOSFET | ||
| EM6M1T2R | IGBT Transistors MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A | ||
ROHM Semiconductor |
EM6K7T2R | MOSFET TRNSISTR DUAL MOSFET |