| PartNumber | FCA20N60-F109 |
| Description | MOSFET 600V N-CH MOSFET |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V |
| Id Continuous Drain Current | 20 A |
| Rds On Drain Source Resistance | 190 mOhms |
| Vgs Gate Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 208 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Height | 20.1 mm |
| Length | 16.2 mm |
| Series | FCA20N60_F109 |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 65 ns |
| Product Type | MOSFET |
| Rise Time | 140 ns |
| Factory Pack Quantity | 450 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 230 ns |
| Typical Turn On Delay Time | 62 ns |
| Part # Aliases | FCA20N60_F109 |
| Unit Weight | 0.225789 oz |