 | | |
| PartNumber | FCD5N60TM | FCD5N60TM-WS |
| Description | MOSFET 650V SUPERFET | MOSFET 600V 4.6A N-Channel |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 4.6 A | 4.6 A |
| Rds On Drain Source Resistance | 810 mOhms | 950 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 54 W | 54 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | SuperFET | SuperFET |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FCD5N60 | FCD5N60 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 3.8 S | - |
| Fall Time | 22 ns | 22 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 40 ns | 40 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns | 47 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Unit Weight | 0.009184 oz | 0.009184 oz |
| Part # Aliases | - | FCD5N60TM_WS |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCD5N60TM | MOSFET 650V SUPERFET | |
| FCD5N60TM-WS | MOSFET 600V 4.6A N-Channel | ||
ON Semiconductor |
FCD5N60TM | MOSFET N-CH 600V 4.6A DPAK | |
| FCD5N60TM-WS | MOSFET N-CH 600V 4.6A DPAK | ||
| FCD5N60TMCT | 신규 및 오리지널 | ||
| FCD5N60TM_WS | 5A SUPERFET IN D-PAK (TO252) | ||
| FCD5N60TM-CUT TAPE | 신규 및 오리지널 |