FCMT1

FCMT125N65S3 vs FCMT16N60N vs FCMT16N60N-ES

 
PartNumberFCMT125N65S3FCMT16N60NFCMT16N60N-ES
DescriptionMOSFET SF3 650V 125MOHM MO SFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
Mounting StyleSMD/SMT--
Package / CasePQFN-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance125 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge49 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation181 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min16 S--
Fall Time5.8 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time22 ns--
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCMT199N60 MOSFET 199mohm 600V SuperFET2
FCMT180N65S3 MOSFET SUPERFET3 650V 17A 180 mOhm
FCMT125N65S3 MOSFET SF3 650V 125MOHM MO SFET
FCMT16N60N 신규 및 오리지널
FCMT16N60N-ES 신규 및 오리지널
FCMT190N60 신규 및 오리지널
FCMT190N65F-E 신규 및 오리지널
ON Semiconductor
ON Semiconductor
FCMT199N60 MOSFET N-CH 600V 20.2A POWER88
FCMT180N65S3 SUPERFET3 650V PQFN88
FCMT125N65S3 SF3 650V 125MOHM MOSFET
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