PartNumber | FCP190N60-GF102 | FCP190N60 | FCP190N60E |
Description | MOSFET 20.2A 600V MOSFET | MOSFET 600V N-Channel MOSFET SuperFET II | MOSFET 600V N-CHAN MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 600 V |
Id Continuous Drain Current | 20.2 A | 20.2 A | 20.6 A |
Rds On Drain Source Resistance | 170 mOhms | 199 mOhms | 190 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 20 V, 30 V | 20 V | - |
Qg Gate Charge | 57 nC | - | 63 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 208 W | 208 W |
Configuration | Single | Single | Single |
Tradename | SuperFET II | SuperFET II | SuperFET II |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FCP190N60_GF102 | FCP190N60 | FCP190N60E |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 21 S | - | - |
Fall Time | 5 ns | - | 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | - | 14 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 64 ns | - | 101 ns |
Typical Turn On Delay Time | 20 ns | - | 23 ns |
Part # Aliases | FCP190N60_GF102 | - | - |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.063493 oz |
Type | - | - | 600 V N-Channel MOSFET |