FCP3

FCP36N60N vs FCP360N65S3R0 vs FCP36N60

 
PartNumberFCP36N60NFCP360N65S3R0FCP36N60
DescriptionMOSFET 600V NChannel MOSFET SupreMOSMOSFET SUPERFET3 650V TO220 PKG
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current36 A10 A-
Rds On Drain Source Resistance90 mOhms360 mOhms-
Vgs th Gate Source Threshold Voltage4 V2.5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge86 nC18 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation312 W83 W-
ConfigurationSingleSingle-
TradenameSupreMOS--
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFCP36N60NSuperFET3-
Transistor Type1 N-Channel1 N-Channel SuperFET III MOSFET-
Width4.7 mm--
BrandON Semiconductor / FairchildON Semiconductor-
Forward Transconductance Min41 S--
Fall Time4 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time22 ns11 ns-
Factory Pack Quantity1000800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time94 ns34 ns-
Typical Turn On Delay Time23 ns12 ns-
Unit Weight0.085398 oz--
Channel Mode-Enhancement-
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP36N60N MOSFET 600V NChannel MOSFET SupreMOS
FCP380N60 MOSFET SuperFET2, 380mohm
FCP380N60E MOSFET 600V N-CHAN MOSFET
FCP360N65S3R0 MOSFET SUPERFET3 650V TO220 PKG
FCP36N60 신규 및 오리지널
FCP380N60E,FCP380N60 신규 및 오리지널
FCP380N60E,FCP380N60, 신규 및 오리지널
ON Semiconductor
ON Semiconductor
FCP380N60 MOSFET N-CH 600V TO220-3
FCP380N60E MOSFET N-CH 600V TO220-3
FCP360N65S3R0 SUPERFET3 650V TO220 PKG
FCP36N60N MOSFET N-CH 600V 36A TO-220-3
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