FD200R12

FD200R12KE3 vs FD200R12KE3HOSA1 vs FD200R12KE3PHOSA1

 
PartNumberFD200R12KE3FD200R12KE3HOSA1FD200R12KE3PHOSA1
DescriptionIGBT Modules 1200V 200A CHOPPERIGBT MODULE VCES 1200V 200AMOD IGBT MED PWR 62MM-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C200 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1.04 kW--
Package / CaseIS5a ( 62 mm )-5--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.9 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFD200R12KE3HOSA1 SP000083495--
Unit Weight12 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
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FD200R12KE3P 신규 및 오리지널
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FD200R12KS4 신규 및 오리지널
FD200R12KT3 신규 및 오리지널
FD200R12PT4-B6 신규 및 오리지널
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