FDBL86366

FDBL86366-F085 vs FDBL86366 vs FDBL86366_F085

 
PartNumberFDBL86366-F085FDBL86366FDBL86366_F085
DescriptionMOSFET N-Channel Power Trench MOSFETN-CHANNEL POWER TRENCH MOSFET
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseH-PSOF-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current220 A--
Rds On Drain Source Resistance6.1 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge86 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
TradenamePowerTrench--
PackagingReel-Reel
Height2.4 mm--
Length10.48 mm--
SeriesFDBL86366_F085--
Transistor Type1 N-Channel-1 N-Channel
Width9.9 mm--
BrandON Semiconductor / Fairchild--
Fall Time17 ns-17 ns
Product TypeMOSFET--
Rise Time34 ns-34 ns
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns-40 ns
Typical Turn On Delay Time30 ns-30 ns
Part # AliasesFDBL86366_F085--
Unit Weight0.029985 oz-0.029986 oz
Package Case--MO-299A-8
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--220 A
Vds Drain Source Breakdown Voltage--80 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--6.1 mOhms
Qg Gate Charge--86 nC
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDBL86366-F085 MOSFET N-Channel Power Trench MOSFET
FDBL86366 신규 및 오리지널
FDBL86366_F085 N-CHANNEL POWER TRENCH MOSFET
ON Semiconductor
ON Semiconductor
FDBL86366-F085 MOSFET N-CH 80V 220A PSOF8
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