| PartNumber | FDG6301N-F085P | FDG6301N-F085 |
| Description | MOSFET N-Channel Power Mosfet | MOSFET Dual N-Chan Digital MOSFET; Automotive |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SC-70-6 | SC-70-6 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | FDG6301N_F085P | FDG6301N_F085 |
| Unit Weight | 0.000212 oz | 0.000988 oz |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 25 V |
| Id Continuous Drain Current | - | 220 mA |
| Rds On Drain Source Resistance | - | 7 Ohms |
| Vgs Gate Source Voltage | - | 8 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 300 mW |
| Configuration | - | Dual |
| Height | - | 1.1 mm |
| Length | - | 2 mm |
| Series | - | FDG6301N_F085 |
| Transistor Type | - | 2 N-Channel |
| Width | - | 1.25 mm |