FDM6

FDM606P vs FDM606P-NL vs FDM6205V

 
PartNumberFDM606PFDM606P-NLFDM6205V
DescriptionMOSFET P-Ch Power Trench Logic Level 1.8V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePower-33-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6.8 A--
Rds On Drain Source Resistance26 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.92 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.8 mm--
Length3.3 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypeMOSFET--
Width3.3 mm--
BrandON Semiconductor / Fairchild--
Fall Time46 ns--
Product TypeMOSFET--
Rise Time46 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time134 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFDM606P_NL--
Unit Weight0.010582 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDM606P MOSFET P-Ch Power Trench Logic Level 1.8V
ON Semiconductor
ON Semiconductor
FDM606P MOSFET P-CH 20V 6.8A MICROFET
FDM6296 MOSFET N-CH 30V 11.5A POWER33
FDM606P-NL 신규 및 오리지널
FDM6205V 신규 및 오리지널
FDM6269 신규 및 오리지널
FDM6296(30V/11.5A) 신규 및 오리지널
FDM6296.. 신규 및 오리지널
FDM6296_G 신규 및 오리지널
FDM6675BZ 신규 및 오리지널
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