FDMS8

FDMS8888 vs FDMS8880 vs FDMS8D8N15C

 
PartNumberFDMS8888FDMS8880FDMS8D8N15C
DescriptionMOSFET N-Channel PwrTrench 30V 21A 9.5mOhmMOSFET 30V N-Channel PowerTrenchMOSFET FET ENGR DEV-NOT REL
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-56-8Power-56-8PQFN-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V150 V
Id Continuous Drain Current13.5 A13.5 A85 A
Rds On Drain Source Resistance9.5 mOhms8.5 mOhms8.8 mOhms
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation42 W2.5 W132 W
ConfigurationSingleSingleSingle
TradenamePowerTrenchPowerTrench-
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length6 mm6 mm-
SeriesFDMS8888FDMS8880-
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.002610 oz0.002402 oz-
Vgs Gate Source Voltage-20 V20 V
Channel Mode-EnhancementEnhancement
Fall Time-4 ns5 ns
Rise Time-6 ns19 ns
Typical Turn Off Delay Time-23 ns30 ns
Typical Turn On Delay Time-9 ns23 ns
Vgs th Gate Source Threshold Voltage--2.5 V
Qg Gate Charge--50 nC
Forward Transconductance Min--120 S
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS8888 MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm
FDMS8880 MOSFET 30V N-Channel PowerTrench
FDMS8D8N15C MOSFET FET ENGR DEV-NOT REL
FDMS8D8N15C Trans MOSFET N-CH 150V 12.2A 8-Pin PQFN EP T/R
ON Semiconductor
ON Semiconductor
FDMS8880 RF Bipolar Transistors MOSFET 30V N-Channel PowerTrench
FDMS8848NZ MOSFET N-CH 40V 22.8A POWER56
FDMS8888 MOSFET N-CH 30V 13.5A 8-PQFN
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