 | | | |
| PartNumber | FDN5618P | FDN5630 | FDN537N |
| Description | MOSFET SSOT-3 P-CH 60V | MOSFET SSOT-3 N-CH 60V | MOSFET 30V Single N-Ch PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SSOT-3 | SSOT-3 | SSOT-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 30 V |
| Id Continuous Drain Current | 1.2 A | 1.7 A | 8 A |
| Rds On Drain Source Resistance | 170 mOhms | 73 mOhms | 36 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 1.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerTrench | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 1.12 mm | 1.12 mm | 1.12 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | FDN5618P | FDN5630 | FDN537N |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | - |
| Width | 1.4 mm | 1.4 mm | 1.4 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 4.3 S | 6 S | 24 S |
| Fall Time | 8 ns | 6 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 6 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16.5 ns | 15 ns | 19 ns |
| Typical Turn On Delay Time | 6.5 ns | 10 ns | 10 ns |
| Part # Aliases | FDN5618P_NL | FDN5630_NL | - |
| Unit Weight | 0.001058 oz | 0.001058 oz | 0.001058 oz |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Qg Gate Charge | - | - | 8.4 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDN5618P | MOSFET SSOT-3 P-CH 60V | |
| FDN5630 | MOSFET SSOT-3 N-CH 60V | ||
| FDN5632N-F085 | MOSFET Trans MOS N-Ch 60V 1.7A | ||
| FDN537N | MOSFET 30V Single N-Ch PowerTrench MOSFET | ||
| FDN503 | 신규 및 오리지널 | ||
| FDN5330SX | 신규 및 오리지널 | ||
| FDN533SX | 신규 및 오리지널 | ||
| FDN537N-NL | 신규 및 오리지널 | ||
| FDN5614P | 신규 및 오리지널 | ||
| FDN5618P , LTV-357T-A-G | 신규 및 오리지널 | ||
| FDN5618P-NL | 신규 및 오리지널 | ||
| FDN5618P-NL , 1N5250BTA | 신규 및 오리지널 | ||
| FDN5618PDKR-ND | 신규 및 오리지널 | ||
| FDN5630 , 1N5250BTR | 신규 및 오리지널 | ||
| FDN5630(5630) | 신규 및 오리지널 | ||
| FDN5630-NL | 신규 및 오리지널 | ||
| FDN5630N | 신규 및 오리지널 | ||
| FDN5630N-NL | 신규 및 오리지널 | ||
| FDN5630PNL | 신규 및 오리지널 | ||
| FDN5630_F095 | MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH | ||
| FDN5630_G | 신규 및 오리지널 | ||
| FDN5632 | 신규 및 오리지널 | ||
| FDN5632-NL | 신규 및 오리지널 | ||
| FDN5632N | MOSFET Trans MOS N-Ch 60V 1.7A - Bulk (Alt: FDN5632N) | ||
| FDN5632N-F085 , 1N5251B | 신규 및 오리지널 | ||
| FDN5632N-NL | 신규 및 오리지널 | ||
| FDN5632N_F085 | NMOS SSOT3 60V 82 MOHM | ||
| FDN5618P-CUT TAPE | 신규 및 오리지널 | ||
| FDN5630-CUT TAPE | 신규 및 오리지널 | ||
| FDN5632N-F085-CUT TAPE | 신규 및 오리지널 | ||
ON Semiconductor |
FDN537N | MOSFET N-CH 30V 6.5A SSOT-3 | |
| FDN5618P | MOSFET P-CH 60V 1.25A SSOT3 | ||
| FDN5630 | MOSFET N-CH 60V 1.7A SSOT3 | ||
| FDN5632N-F085 | MOSFET N-CH 60V 1.7A SSOT3 | ||
| FDN5618P_G | INTEGRATED CIRCUIT |