 |  | | |
| PartNumber | FDT86102LZ | FDT86102 | FDT86102LZ-NL |
| Description | MOSFET 100V N-Channel PowerTrench MOSFET | ||
| Manufacturer | ON Semiconductor | Fairchi | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 6.6 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.2 W | - | - |
| Configuration | Single | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.8 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | FDT86102LZ | PowerTrenchR | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 26 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.003951 oz | 0.008826 oz | - |
| Package Case | - | TO-261-4, TO-261AA | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-223-4 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 1490pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 6.6A (Ta) | - |
| Rds On Max Id Vgs | - | 28 mOhm @ 6.6A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 25nC @ 10V | - |
| Pd Power Dissipation | - | 2.2 W | - |
| Id Continuous Drain Current | - | 6.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 28 mOhms | - |
| Qg Gate Charge | - | 17 nC | - |
| Forward Transconductance Min | - | 26 S | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDT86106LZ | MOSFET 100V N-Channel PowerTrench MOSFET | |
| FDT86102LZ | MOSFET 100V N-Channel PowerTrench MOSFET | ||
| FDT86102 | 신규 및 오리지널 | ||
| FDT86102LZ-NL | 신규 및 오리지널 | ||
| FDT86106 | 신규 및 오리지널 | ||
ON Semiconductor |
FDT86102LZ | MOSFET N-CH 100V 6.6A SOT-223 | |
| FDT86106LZ | MOSFET N-CH 100V 3.2A SOT-223-4 |