 | |  | |
| PartNumber | FDWS9509L-F085 | FDWS9508L-F085 | FDWS9508L_F085 |
| Description | MOSFET PMOS PWR56 40V 8 MOHM | MOSFET PMOS PWR56 40V 4.9 MOHM | MOSFET P-CH PWR TRENCH PT8-40V |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN-8 | DFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 65 A | 80 A | - |
| Rds On Drain Source Resistance | 8 mOhms | 4.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 48 nC | 82 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 107 W | 214 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 P-Channel Power Trench MOSFET | 1 P-Channel Power Trench MOSFET | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 71 ns | 114 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 198 ns | 389 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| FDWS9509L-F085 | MOSFET PMOS PWR56 40V 8 MOHM | ||
| FDWS9508L-F085 | MOSFET PMOS PWR56 40V 4.9 MOHM | ||
ON Semiconductor |
FDWS9508L_F085 | MOSFET P-CH PWR TRENCH PT8-40V | |
| FDWS9509L-F085 | PMOS PWR56 40V 8 MOHM |