 |  | |
| PartNumber | FF200R17KE4 | FF200R17KE4HOSA1 |
| Description | IGBT Modules IGBT Module 200A 1700V | IGBT MODULE VCES 1200V 200A |
| Manufacturer | Infineon | - |
| Product Category | IGBT Modules | - |
| RoHS | Y | - |
| Product | IGBT Silicon Modules | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 1700 V | - |
| Collector Emitter Saturation Voltage | 2.45 V | - |
| Continuous Collector Current at 25 C | 310 A | - |
| Gate Emitter Leakage Current | 100 nA | - |
| Pd Power Dissipation | 1250 W | - |
| Package / Case | 62 mm | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tray | - |
| Brand | Infineon Technologies | - |
| Mounting Style | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | - |
| Product Type | IGBT Modules | - |
| Factory Pack Quantity | 10 | - |
| Subcategory | IGBTs | - |
| Part # Aliases | FF200R17KE4HOSA1 SP000713374 | - |
| Unit Weight | 12 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
FF200R17KE4 | IGBT Modules IGBT Module 200A 1700V | |
| FF200R17KE4HOSA1 | IGBT MODULE VCES 1200V 200A | ||
| FF200R17KE4 | IGBT Modules IGBT Module 200A 1700V |