FGA30N6 stock, FGA30N6, FGA30N60LSDTU


PartNumber	FGA30N60LSDTU	FGA30N65SMD
Description	IGBT Transistors 30A 600V N-Ch Planar	IGBT Transistors FS2PIGBT TO3PN 30A 650V
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-3PN-3	TO-3PN-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	600 V	650 V
Maximum Gate Emitter Voltage	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 175 C
Series	FGA30N60LSD	FGA30N65SMD
Packaging	Tube	Tube
Continuous Collector Current Ic Max	60 A	30 A
Height	18.9 mm	-
Length	15.8 mm	-
Width	5 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	450	450
Subcategory	IGBTs	IGBTs
Unit Weight	0.225789 oz	0.225789 oz
Collector Emitter Saturation Voltage	-	2.29 V
Continuous Collector Current at 25 C	-	60 A
Pd Power Dissipation	-	300 W
Gate Emitter Leakage Current	-	400 nA

Search Part Number : "FGA30N6", Match & Start with "FGA30N6" - Total : 8

제조사	부분 #	설명
ON Semiconductor / Fairchild	FGA30N60LSDTU	IGBT Transistors 30A 600V N-Ch Planar
ON Semiconductor / Fairchild	FGA30N65SMD	IGBT Transistors FS2PIGBT TO3PN 30A 650V
ON Semiconductor	FGA30N65SMD	IGBT Transistors 650V 30A FS Planar Gen2 IGBT
ON Semiconductor	FGA30N60LSDTU	IGBT Transistors 30A 600V N-Ch Plana
	FGA30N60	신규 및 오리지널
	FGA30N60LSD	신규 및 오리지널
	FGA30N60RUFD	신규 및 오리지널
	FGA30N60UFD	신규 및 오리지널

FGA30N6