FGH30N

FGH30N60LSDTU vs FGH30N6S2 vs FGH30N120FTDTU

 
PartNumberFGH30N60LSDTUFGH30N6S2FGH30N120FTDTU
DescriptionIGBT Transistors PDDIGBT Transistors Sgl N-Ch 600V SMPSIGBT 1200V 60A 339W TO247
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYE-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFGH30N60LSD--
PackagingTubeTube-
Continuous Collector Current Ic Max60 A45 A-
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
Width4.82 mm4.82 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450150-
SubcategoryIGBTsIGBTs-
Unit Weight0.225401 oz1.340411 oz-
Collector Emitter Saturation Voltage-2 V-
Continuous Collector Current at 25 C-45 A-
Pd Power Dissipation-167 W-
Continuous Collector Current-45 A-
Gate Emitter Leakage Current-+/- 250 nA-
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGH30N60LSDTU IGBT Transistors PDD
FGH30N6S2 IGBT Transistors Sgl N-Ch 600V SMPS
FGH30N6S2D Motor / Motion / Ignition Controllers & Drivers Comp 600V N-Ch
ON Semiconductor
ON Semiconductor
FGH30N60LSDTU IGBT 600V 60A 480W TO247
FGH30N120FTDTU IGBT 1200V 60A 339W TO247
FGH30N6S2 IGBT 600V 45A 167W TO247
FGH30N6S2D IGBT 600V 45A 167W TO247
FGH30N120 신규 및 오리지널
FGH30N120FTD 신규 및 오리지널
FGH30N120SMD 신규 및 오리지널
FGH30N60 신규 및 오리지널
FGH30N60LSD IGBT Transistors 1.1V 30A High Speed
FGH30N6S2/D 신규 및 오리지널
FGH30N6S2D_W49009A 신규 및 오리지널
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