| PartNumber | FGH50T65SQD-F155 | FGH50T65UPD |
| Description | IGBT Transistors 650V FS4 Trench IGBT | IGBT Transistors 650 V 100 A 240 W |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-247 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V | 25 V |
| Continuous Collector Current at 25 C | 100 A | 100 A |
| Pd Power Dissipation | 268 W | 240 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | FGH50T65SQD | FGH50T65UPD |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 100 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | +/- 400 nA | 400 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | FGH50T65SQD_F155 | - |
| Unit Weight | 0.225401 oz | 0.225401 oz |