FJE3303H1

FJE3303H1TU vs FJE3303H1 vs FJE3303H1TU,E3303-1,

 
PartNumberFJE3303H1TUFJE3303H1FJE3303H1TU,E3303-1,
DescriptionBipolar Transistors - BJT NPN 70 0V/1.5A
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage3 V3 V-
Maximum DC Collector Current1.5 A1.5 A-
Gain Bandwidth Product fT4 MHz4 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJE3303--
Height11 mm--
Length8 mm--
PackagingTubeTube-
Width3.25 mm--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1920--
SubcategoryTransistors--
Part # AliasesFJE3303H1TU_NL--
Unit Weight0.026843 oz0.026843 oz-
Part Aliases-FJE3303H1TU_NL-
Package Case-TO-225AA, TO-126-3-
Mounting Type-Through Hole-
Supplier Device Package-TO-126-3-
Power Max-20W-
Transistor Type-NPN-
Current Collector Ic Max-1.5A-
Voltage Collector Emitter Breakdown Max-400V-
DC Current Gain hFE Min Ic Vce-8 @ 500mA, 2V-
Vce Saturation Max Ib Ic-3V @ 500mA, 1.5A-
Current Collector Cutoff Max-10μA (ICBO)-
Frequency Transition-4MHz-
Pd Power Dissipation-20 W-
Collector Emitter Voltage VCEO Max-400 V-
Collector Base Voltage VCBO-700 V-
Emitter Base Voltage VEBO-9 V-
DC Collector Base Gain hfe Min-8-
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJE3303H1TU Bipolar Transistors - BJT NPN 70 0V/1.5A
ON Semiconductor
ON Semiconductor
FJE3303H1TU TRANS NPN 400V 1.5A TO126
FJE3303H1 신규 및 오리지널
FJE3303H1TU,E3303-1, 신규 및 오리지널
FJE3303H1TU,FJE3303H2TU, 신규 및 오리지널
FJE3303H1TU,FJE3303H2TU,E3303-2,E3303-1, 신규 및 오리지널
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