FJN3302

FJN3302 vs FJN3302R vs FJN3302RAT

 
PartNumberFJN3302FJN3302RFJN3302RAT
Description
ManufacturerFairchild SemiconductorFairchild Semiconductor-
Product CategoryTransistors (BJT) - Single, Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
PackagingAmmo PackAmmo Pack-
Part AliasesFJN3302RTA_NLFJN3302RTA_NL-
Unit Weight0.008466 oz0.008466 oz-
Mounting StyleThrough HoleThrough Hole-
Package CaseTO-92-3 Kinked LeadTO-92-3 Kinked Lead-
ConfigurationSingleSingle-
Pd Power Dissipation0.3 W0.3 W-
Maximum Operating Temperature+ 150 C+ 150 C-
Minimum Operating Temperature- 55 C- 55 C-
Collector Emitter Voltage VCEO Max50 V50 V-
Transistor PolarityNPNNPN-
Emitter Base Voltage VEBO10 V10 V-
Continuous Collector Current0.1 A0.1 A-
DC Collector Base Gain hfe Min3030-
Typical Input Resistor10 kOhms10 kOhms-
Typical Resistor Ratio11-
Peak DC Collector Current100 mA100 mA-
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJN3302RTA Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
FJN3302RTA Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJN3302RBU TRANS PREBIAS NPN 300MW TO92-3
FJN3302 신규 및 오리지널
FJN3302R 신규 및 오리지널
FJN3302RAT 신규 및 오리지널
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