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| PartNumber | FJV3113RMTF | FJV3112RMTF | FJV3111RMTF |
| Description | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | Bipolar Transistors - Pre-Biased NPN/40V/100mA/47K | Bipolar Transistors - Pre-Biased NPN/40V/100mA/22K |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Configuration | Single | Single | Single |
| Transistor Polarity | NPN | NPN | NPN |
| Typical Input Resistor | 2.2 kOhms | 47 kOhms | 22 kOhms |
| Typical Resistor Ratio | 0.047 | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| DC Collector/Base Gain hfe Min | 68 | 100 | 100 |
| Collector Emitter Voltage VCEO Max | 50 V | 40 V | 40 V |
| Continuous Collector Current | 0.1 A | 0.1 A | 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | FJV3113R | - | - |
| Packaging | Reel | Reel | Reel |
| DC Current Gain hFE Max | 68 | 600 | 600 |
| Emitter Base Voltage VEBO | 10 V | 5 V | 5 V |
| Height | 0.93 mm | 0.93 mm | 0.93 mm |
| Length | 2.92 mm | 2.92 mm | 2.92 mm |
| Type | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJV3113RMTF | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | |
| FJV3112RMTF | Bipolar Transistors - Pre-Biased NPN/40V/100mA/47K | ||
| FJV3111RMTF | Bipolar Transistors - Pre-Biased NPN/40V/100mA/22K | ||
| FJV3114RMTF | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K | ||
ON Semiconductor |
FJV3115RMTF | TRANS PREBIAS NPN 200MW SOT23-3 | |
| FJV3114RMTF | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K | ||
| FJV3113RMTF | TRANS PREBIAS NPN 200MW SOT23-3 | ||
| FJV3111RMTF | TRANS PREBIAS NPN 200MW SOT23-3 | ||
| FJV3112RMTF | TRANS PREBIAS NPN 200MW SOT23-3 | ||
| FJV3115RMTF_Q | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 10K | ||
| FJV3113RMTF_Q | Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K | ||
| FJV3111RMTF , 1N5931B | 신규 및 오리지널 | ||
| FJV3112R-NL | 신규 및 오리지널 | ||
| FJV3113RMTF , 1N5935B | 신규 및 오리지널 | ||
| FJV3114R-NL | 신규 및 오리지널 | ||
| FJV3114RMTF , 1N5936B | 신규 및 오리지널 | ||
| FJV3115RMTF , 1N5936BRL | 신규 및 오리지널 | ||
| FJV3111R | 신규 및 오리지널 | ||
| FJV3114R | 신규 및 오리지널 |