FJV4110R

FJV4110RMTF vs FJV4110RMTF , 1N6206A36P vs FJV4110RMTF , 1N6206A36PG

 
PartNumberFJV4110RMTFFJV4110RMTF , 1N6206A36PFJV4110RMTF , 1N6206A36PG
DescriptionBipolar Transistors - Pre-Biased PNP/50V/100mA/10K
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max40 V--
Continuous Collector Current- 0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO- 5 V--
Height0.93 mm--
Length2.9 mm--
TypePNP Epitaxial Silicon Transistor--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJV4110RMTF Bipolar Transistors - Pre-Biased PNP/50V/100mA/10K
ON Semiconductor
ON Semiconductor
FJV4110RMTF TRANS PREBIAS PNP 200MW SOT23-3
FJV4110RMTF , 1N6206A36P 신규 및 오리지널
FJV4110RMTF , 1N6206A36PG 신규 및 오리지널
Top