FP75R12KE

FP75R12KE3 vs FP75R12KE3BOSA1 vs FP75R12KE3G

 
PartNumberFP75R12KE3FP75R12KE3BOSA1FP75R12KE3G
DescriptionIGBT Modules 1200V 75A PIMIGBT MODULE 1200V 75A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation350 W--
Package / CaseEconoPIM3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP75R12KE3BOSA1 SP000100415--
Unit Weight10.582189 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
FP75R12KE3 IGBT Modules 1200V 75A PIM
FP75R12KE3BOSA1 IGBT MODULE 1200V 75A
FP75R12KE3G 신규 및 오리지널
FP75R12KE3V1 신규 및 오리지널
FP75R12KE3 IGBT Modules 1200V 75A PIM
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