 | |  | |
| PartNumber | FQB17N08TM | FQB17N08LTM | FQB17N08 |
| Description | MOSFET 80V N-Channel QFET Logic Level | MOSFET 80V N-Channel QFET Logic Level | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 16.5 A | 16.5 A | - |
| Rds On Drain Source Resistance | 115 mOhms | 100 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 3.13 W | 3.75 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 5.3 S | - | - |
| Fall Time | 25 ns | 75 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 60 ns | 290 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 20 ns | - |
| Typical Turn On Delay Time | 4.8 ns | 7 ns | - |
| Unit Weight | 0.011640 oz | 0.139332 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB17N08TM | MOSFET 80V N-Channel QFET Logic Level | |
| FQB17N08LTM | MOSFET 80V N-Channel QFET Logic Level | ||
| FQB17N08 | 신규 및 오리지널 | ||
| FQB17N08TM-NL | 신규 및 오리지널 | ||
| FQB17N08TMFSC | 신규 및 오리지널 | ||
ON Semiconductor |
FQB17N08TM | MOSFET N-CH 80V 16.5A D2PAK | |
| FQB17N08LTM | MOSFET N-CH 80V 16.5A D2PAK |