 |  | | |
| PartNumber | FQB6N80TM | FQB6N80TM-NL | FQB6N80TM-CUT TAPE |
| Description | MOSFET 800V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 5.8 A | - | - |
| Rds On Drain Source Resistance | 1.95 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQB6N80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.9 S | - | - |
| Fall Time | 45 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 70 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 65 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | FQB6N80TM_NL | - | - |
| Unit Weight | 0.046296 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor |
FQB6N80TM | MOSFET N-CH 800V 5.8A D2PAK | |
| FQB6N90TM_AM002 | MOSFET N-CH 900V 5.8A D2PAK | ||
| FQB6N80TM-NL | 신규 및 오리지널 | ||
| FQB6N90 | 신규 및 오리지널 | ||
| FQB6N90C | 신규 및 오리지널 | ||
| FQB6N90TM | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB6N90TM-NL | 신규 및 오리지널 | ||
| FQB6P25 | 신규 및 오리지널 | ||
| FQB6N80TM-CUT TAPE | 신규 및 오리지널 |