 |  | | |
| PartNumber | FQB6N60CTM | FQB6N60 | FQB6N60C |
| Description | MOSFET N-CH/600V/6A/QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 5.5 A | - | - |
| Rds On Drain Source Resistance | 1.7 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 45 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | FQB6N60CTM_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB6N60CTM | MOSFET N-CH/600V/6A/QFET | |
| FQB6N60 | 신규 및 오리지널 | ||
| FQB6N60C | 신규 및 오리지널 | ||
| FQB6N60CTM-NL | 신규 및 오리지널 | ||
| FQB6N60TM-NL | 신규 및 오리지널 | ||
ON Semiconductor |
FQB6N60CTM | MOSFET N-CH 600V 5.5A D2PAK | |
| FQB6N60TM | MOSFET N-CH 600V 6.2A D2PAK |