FQB7N60T

FQB7N60TM vs FQB7N60TM-WS vs FQB7N60TM-NL

 
PartNumberFQB7N60TMFQB7N60TM-WSFQB7N60TM-NL
DescriptionMOSFET 600V N-Channel QFETMOSFET 600V 7.4A 1Ohm N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current7.4 A7.4 A-
Rds On Drain Source Resistance1 Ohms1 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.13 W3.13 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFQB7N60FQB7N60-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min6.4 S--
Fall Time60 ns60 ns-
Product TypeMOSFETMOSFET-
Rise Time80 ns80 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time30 ns30 ns-
Unit Weight0.046296 oz--
Tradename-QFET-
Part # Aliases-FQB7N60TM_WS-
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB7N60TM MOSFET 600V N-Channel QFET
FQB7N60TM-WS MOSFET 600V 7.4A 1Ohm N-Channel
FQB7N60TM-NL 신규 및 오리지널
FQB7N60TM_WS RF Bipolar Transistors MOSFET 600V 7.4A 1Ohm N-Channel
ON Semiconductor
ON Semiconductor
FQB7N60TM-WS MOSFET N-CH 600V 7.4A D2PAK
FQB7N60TM Darlington Transistors MOSFET 600V N-Channel QFET
Top