 |  | |
| PartNumber | FQB8N60CTM | FQB8N60CTM-WS |
| Description | MOSFET 600V N-Channel Adv Q-FET C-Series | MOSFET 600V, NCH MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 7.5 A | 3.75 A |
| Rds On Drain Source Resistance | 1.2 Ohms | 1.2 Ohms |
| Vgs Gate Source Voltage | 30 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.13 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQB8N60C | QFET |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 8.7 S | - |
| Fall Time | 64.5 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 60.5 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 81 ns | - |
| Typical Turn On Delay Time | 16.5 ns | - |
| Part # Aliases | FQB8N60CTM_NL | FQB8N60CTM_WS |
| Unit Weight | 0.046296 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB8N60CTM | MOSFET 600V N-Channel Adv Q-FET C-Series | |
| FQB8N60CTM-WS | MOSFET 600V, NCH MOSFET | ||
ON Semiconductor |
FQB8N60CTM | MOSFET N-CH 600V 7.5A D2PAK | |
| FQB8N60CTM-WS | MOSFET N-CH 600V 7.5A | ||
| FQB8N60CTM_WS | IGBT Transistors MOSFET 600V, NCH MOSFET |