 | | | |
| PartNumber | FQD6N65C | FQD6P25 | FQD6N60CTM_WS |
| Description | MOSFET 600V N-Ch MOSFET QFET | ||
| Manufacturer | - | - | Fairchild Semiconductor |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.009184 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 80 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 45 ns |
| Rise Time | - | - | 45 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 2 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 45 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Channel Mode | - | - | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD6P25TF | MOSFET 250V P-Ch QFET | |
| FQD6N65C | 신규 및 오리지널 | ||
| FQD6P25 | 신규 및 오리지널 | ||
| FQD6N60CTM_WS | MOSFET 600V N-Ch MOSFET QFET | ||
ON Semiconductor |
FQD6P25TF | MOSFET P-CH 250V 4.7A DPAK | |
| FQD6P25TM | MOSFET P-CH 250V 4.7A DPAK | ||
| FQD6N60CTM-WS | MOSFET N-CH 600V DPAK |